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DKDP Pockels Cell
Standard
series:NSP-D-08/10/11/12/13/15
Jinan
nanosecond photoelectric technology co., LTD., growing DKDP crystal
independently. The optimized electro-optic Q switch made of DKDP crystal is
suitable for electro-optic Q-modulated laser with wave length of 250nm-1300nm. By
applying pulse voltage to Q switch, the number of inversion of upper level
particles in laser material and Q factor of laser resonator can be controlled,
so that the laser beam produced a peak power of several hundred megawatts to
gigawatt level.
Features:
l Deuterium
concentration in KD*P crystal > 98%.
l The
birefringence of crystal can be avoided by the optical axis direction of
crystal.
l Without
external stress assembly, the space distribution of photoelectric field is uniform.
l High
dynamic-static ratio: ~90%.
l Good
switch off performance, low light leak < 10mJ@500mJ, 1064nm, 10ns pulse
width, 10Hz frequency.
l It
has unique sealing assembly and good air tightness.
l High
quality stability, instability < 1%.
l Wide
operating temperature range: - 40℃ ~60℃.
l On
request,configurable ceramic aperture.
Service:
n One
year's guarantee period, the loss of customers caused within the guarantee
period shall be borne by the supplier.
n Free
maintenance.
n Products
with special requirements can be tailored for customers.
Specification Series:
Model |
NSP-D-08 |
NSP-D-10 |
NSP-D-11 |
NSP-D-12 |
NSP-D-13 |
NSP-D-15 |
Physical parameters |
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Crystal diameter(mm) |
Ф8 |
Ф10 |
Ф11 |
Ф12 |
Ф13 |
Ф15 |
Clear aperture(mm) |
Ф7.5 |
Ф9.5 |
Ф10.5 |
Ф11.5 |
Ф12.5 |
Ф14.5 |
Cell size(mm) |
Ф20×30 |
Ф25.4×39 |
Ф25.4×39 |
Ф25.4×39 |
Ф32×41 |
Ф32×43 |
Damage threshold@1064nm,
10HZ, 10ns |
9J/cm2@1064nm,
10Hz, 10ns pluse |
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Electro-optic
parameters |
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Contrast ratio |
3000:1 |
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Single pass
insertion loss@1064nm |
<1.5% |
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Capacitance(pF) |
~3 |
~5 |
~6 |
~6 |
~8 |
~9 |
Quarter wave
voltage(@1064 nm), V ,DC |
3200~3800 |
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pulse width(ns) |
~10 |
Phone:+86 156 28763627
Email:sales@nanosecondpe.com
Website:www.nanosecondpe.com
Sales:Guang lie Li
Add:No.17,LanXiang Road,Tianqiao District,Jinan,China
JINAN NANOSECOND PHOTOELECTRIC TECHNOLOGY CO., LTD